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Transistors Power Field-Effect Transistors IRF7314PBF

IRF7314PBF
Description: Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Overview of IRF7314PBF by Infineon Technologies AG

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Price & Stock for IRF7314PBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IRF7314PBF-ND
DigiKey MOSFET 2P-CH 20V 5.3A 8SO Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
Flip Electronics Stock 200
RFQ
Win Source Electronics MOSFET 2P-CH 20V 5.3A 8-SOIC 13000
  • 80 $0.6500
  • 190 $0.5340
  • 295 $0.5170
  • 400 $0.5000
  • 520 $0.4840
  • 695 $0.4340
$0.4340 / $0.6500 Buy Now

CAD Models for IRF7314PBF by Infineon Technologies AG
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Part Data Attributes for IRF7314PBF by Infineon Technologies AG
Parametric Data

IRF7314PBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
150 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
5.3 A
Drain-source On Resistance-Max
0.058 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
1.4 W
Pulsed Drain Current-Max (IDM)
21 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7314PBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
    VS

Alternate Parts for IRF7314PBF

This table gives cross-reference parts and alternative options found for IRF7314PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7314PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7314TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8 Infineon Technologies AG IRF7314PBF vs IRF7314TRPBF
IRF7314TR Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7314PBF vs IRF7314TR
IRF7314QPBF Power Field-Effect Transistor, 5.2A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7314PBF vs IRF7314QPBF
IRF7314PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7314PBF vs IRF7314PBF
IRF7314 Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7314PBF vs IRF7314
Part Number Description Manufacturer Compare
IRF7314TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8 Infineon Technologies AG IRF7314PBF vs IRF7314TRPBF
IRF7314QPBF Power Field-Effect Transistor, 5.2A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7314PBF vs IRF7314QPBF

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