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Transistors / Power Field-Effect Transistors / IRF7319PBF
Datasheets
IRF7319PBF by:

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7319PBF by Infineon Technologies AG

Overview of IRF7319PBF by Infineon Technologies AG

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Price & Stock for IRF7319PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7319PBF-ND
DigiKey MOSFET N/P-CH 30V 8SO Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # 70018232
RS IRF7319PBF Dual N/P-channel MOSFET Transistor, 4.9 A, 6.5 A, 30 V, 8-Pin SOIC | Infineon IRF7319PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.0700
$1.0700 RFQ
Rochester Electronics IRF7319 - 20V-60V Complementary MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 99
  • 1 $0.3063
  • 25 $0.3002
  • 100 $0.2879
  • 500 $0.2757
  • 1,000 $0.2604
$0.2604 / $0.3063 Buy Now
DISTI # SMC-IRF7319PBF
Sensible Micro Corporation AS6081 Certified Vendor, Ships Same day, 1 Year Warranty RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1107 34
RFQ
Win Source Electronics HEXFET® Power MOSFET | MOSFET N/P-CH 30V 8SOIC 168000
  • 95 $0.5510
  • 225 $0.4530
  • 345 $0.4380
  • 475 $0.4240
  • 610 $0.4100
  • 820 $0.3680
$0.3680 / $0.5510 Buy Now

Part Details for IRF7319PBF

IRF7319PBF CAD Models

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IRF7319PBF Part Data Attributes:

Parametric Data
IRF7319PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7319PBF Infineon Technologies AG Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 82 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7319PBF

This table gives cross-reference parts and alternative options found for IRF7319PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7319PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7319TRPBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7319PBF vs IRF7319TRPBF
IRF7319TR Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7319PBF vs IRF7319TR
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7319PBF vs IRF7319
IRF7319PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7319PBF vs IRF7319PBF
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7319PBF vs IRF7319
IRF7319TRPBF Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7319PBF vs IRF7319TRPBF
Part Number Description Manufacturer Compare
IRF7389TRPBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7319PBF vs IRF7389TRPBF
NDS8958 Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7319PBF vs NDS8958
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7319PBF vs IRF7319
IRF7389 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7319PBF vs IRF7389
IRF7389TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Infineon Technologies AG IRF7319PBF vs IRF7389TR
IRF7389 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7319PBF vs IRF7389
FDS8958A Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN Fairchild Semiconductor Corporation IRF7319PBF vs FDS8958A
IRF7319PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7319PBF vs IRF7319PBF
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7319PBF vs IRF7319
IRF7389TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7319PBF vs IRF7389TR

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