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Transistors Power Field-Effect Transistors IRF7342TRPBF

IRF7342TRPBF
Description: Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8

Overview of IRF7342TRPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF7342TRPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 19K8263
Newark Dual P Channel Mosfet, -55V, 3.4A, Channel Type:P Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:3.4A, Continuous Drain Current Id P Channel:3.4A Rohs Compliant: Yes |Infineon IRF7342TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2690
  • 1 $1.2600
  • 10 $1.0300
  • 25 $0.9560
  • 50 $0.8820
  • 100 $0.8080
  • 250 $0.7470
  • 500 $0.6850
  • 1,000 $0.5570
$0.5570 / $1.2600 Buy Now
DISTI # IRF7342PBFCT-ND
DigiKey MOSFET 2P-CH 55V 3.4A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 12730
In Stock
  • 1 $1.8100
  • 10 $1.1480
  • 100 $0.7719
  • 500 $0.6102
  • 1,000 $0.5582
  • 2,000 $0.5143
  • 4,000 $0.4774
  • 8,000 $0.4584
$0.4584 / $1.8100 Buy Now
DISTI # IRF7342TRPBF
Avnet Americas Trans MOSFET P-CH 55V 3.4A SO-8 - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 682 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 3500 Partner Stock
  • 682 $0.5244
  • 690 $0.5171
  • 1,400 $0.5134
  • 3,500 $0.4987
  • 6,900 $0.4877
  • 35,000 $0.4730
  • 69,000 $0.4657
$0.4657 / $0.5244 Buy Now
DISTI # IRF7342TRPBF
Avnet Americas Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-IRF7342TRPBF
Mouser Electronics MOSFETs MOSFT DUAL PCh -55V 3.4A RoHS: Compliant 33011
  • 1 $1.1900
  • 10 $0.9720
  • 100 $0.7650
  • 500 $0.6520
  • 1,000 $0.5240
  • 2,000 $0.4910
  • 4,000 $0.4880
  • 8,000 $0.4590
$0.4590 / $1.1900 Buy Now
DISTI # 70017508
RS MOSFET, Power, Dual P-Ch, VDSS -55V, RDS(ON) 0.105Ohm, ID -3.4A, SO-8,PD 2W, VGS+/-20V | Infineon IRF7342TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $1.0800
  • 100 $1.0300
  • 500 $0.9800
  • 1,000 $0.9200
$0.9200 / $1.0800 RFQ
Future Electronics Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks Container: Reel 12000
Reel
  • 4,000 $0.4700
  • 8,000 $0.4650
  • 12,000 $0.4550
  • 16,000 $0.4500
$0.4500 / $0.4700 Buy Now
Future Electronics Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks Container: Reel 4000
Reel
  • 4,000 $0.4700
  • 8,000 $0.4650
  • 12,000 $0.4550
  • 16,000 $0.4500
$0.4500 / $0.4700 Buy Now
Rochester Electronics IRF7342 - 3.4A, 55V, 0.105ohm, 2-Element, P-Channel MOSFET, MS-012AA RoHS: Compliant Status: Active Min Qty: 1 3500
  • 1 $0.5348
  • 25 $0.5241
  • 100 $0.5027
  • 500 $0.4813
  • 1,000 $0.4546
$0.4546 / $0.5348 Buy Now
DISTI # IRF7342TRPBF
TME Transistor: P-MOSFET x2, unipolar, -55V, -3.4A, 2W, SO8 Min Qty: 1 15156
  • 1 $1.1780
  • 10 $0.8530
  • 100 $0.6720
  • 250 $0.6100
  • 500 $0.5670
  • 1,000 $0.5280
  • 2,000 $0.4920
  • 4,000 $0.4600
  • 12,000 $0.4140
$0.4140 / $1.1780 Buy Now
Chip 1 Exchange INSTOCK 4726
RFQ
DISTI # C1S322000484007
Chip1Stop Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes 44000
  • 4,000 $0.3070
  • 12,000 $0.3020
  • 20,000 $0.2980
$0.2980 / $0.3070 Buy Now
DISTI # C1S322000484025
Chip1Stop Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 4000
  • 5 $0.6950
  • 10 $0.5850
  • 50 $0.5440
  • 100 $0.4670
  • 200 $0.4520
  • 500 $0.4090
  • 1,000 $0.4080
  • 4,000 $0.4040
$0.4040 / $0.6950 Buy Now
DISTI # C1S322000484016
Chip1Stop Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes 3964
  • 10 $0.8617
  • 25 $0.8264
  • 100 $0.7075
  • 250 $0.6626
  • 500 $0.6018
  • 1,000 $0.4670
  • 3,000 $0.3919
$0.3919 / $0.8617 Buy Now
LCSC 55V 3.4A 2W 105m10V3.4A 1V250uA 2 P-Channel SOIC-8 MOSFETs ROHS 2670
  • 1 $0.6435
  • 10 $0.5344
  • 30 $0.4791
  • 100 $0.4253
  • 500 $0.3399
  • 1,000 $0.3241
$0.3241 / $0.6435 Buy Now
Win Source Electronics MOSFET 2P-CH 55V 3.4A 8-SOIC 101400
  • 95 $0.5370
  • 230 $0.4410
  • 355 $0.4270
  • 485 $0.4140
  • 625 $0.4000
  • 840 $0.3580
$0.3580 / $0.5370 Buy Now

CAD Models for IRF7342TRPBF by Infineon Technologies AG
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Part Data Attributes for IRF7342TRPBF by Infineon Technologies AG
Parametric Data

IRF7342TRPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SOP-8
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas)
114 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
3.4 A
Drain-source On Resistance-Max
0.105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
86 pF
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
2 W
Power Dissipation-Max (Abs)
1.3 W
Pulsed Drain Current-Max (IDM)
27 A
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
96 ns
Turn-on Time-Max (ton)
37 ns
Want to compare parts?
  1. IRF7342TRPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
    VS

Alternate Parts for IRF7342TRPBF

This table gives cross-reference parts and alternative options found for IRF7342TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7342TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7342 Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7342TRPBF vs IRF7342
IRF7342TR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7342TRPBF vs IRF7342TR
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7342TRPBF vs IRF7342PBF
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7342TRPBF vs IRF7342PBF
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7342TRPBF vs IRF7342TRPBF
Part Number Description Manufacturer Compare
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7342TRPBF vs IRF7342TRPBF
AUIRF7342QTR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7342TRPBF vs AUIRF7342QTR
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7342TRPBF vs IRF7342PBF
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7342TRPBF vs IRF7342PBF
IRF7342TR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7342TRPBF vs IRF7342TR

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