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Part Details for IRF7343TRPBF by Infineon Technologies AG
Overview of IRF7343TRPBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF7343TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
19K8265
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Newark | Dual N/P Channel Mosfet, 55V, Soic, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:4.7A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7343TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 21260 |
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$0.4500 / $1.1500 | Buy Now |
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DISTI #
IRF7343PBFCT-ND
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DigiKey | MOSFET N/P-CH 55V 4.7A/3.4A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
47735 In Stock |
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$0.4176 / $1.6900 | Buy Now |
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DISTI #
IRF7343TRPBF
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Avnet Americas | MOSFET Array, Dual N and P Channel, 55 V, 55 V, 4.7 A, 3.4 A, 50 Milliohms, 105 Milliohms, 8 Pins, SOIC - Tape and Reel (Alt: IRF7343TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days Container: Reel | 40000 |
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RFQ | |
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DISTI #
19K8265
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Avnet Americas | MOSFET Array, Dual N and P Channel, 55 V, 55 V, 4.7 A, 3.4 A, 50 Milliohms, 105 Milliohms, 8 Pins, SOIC - Bulk (Alt: 19K8265) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 8889 Partner Stock |
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$0.5000 / $1.1500 | Buy Now |
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DISTI #
942-IRF7343TRPBF
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Mouser Electronics | MOSFETs MOSFT DUAL N/PCh 55V 4.7A RoHS: Compliant | 10358 |
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$0.4330 / $1.0100 | Buy Now |
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Future Electronics | Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks Container: Reel | 92000Reel |
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$0.3400 / $0.3600 | Buy Now |
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Future Electronics | Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.3250 / $0.3400 | Buy Now |
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Quest Components | 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | 3200 |
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$0.9105 / $2.4280 | Buy Now |
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Quest Components | 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | 2800 |
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$0.6000 / $2.0000 | Buy Now |
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DISTI #
IRF7343TRPBF
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TME | Transistor: N/P-MOSFET, unipolar, 55/-55V, 4.7/-3.4A, 2W, SO8 Min Qty: 1 | 3900 |
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$0.3910 / $0.9930 | Buy Now |
Part Details for IRF7343TRPBF
IRF7343TRPBF CAD Models
IRF7343TRPBF Part Data Attributes
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IRF7343TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7343TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 72 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 4.7 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7343TRPBF
This table gives cross-reference parts and alternative options found for IRF7343TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7343TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRF7343QTR | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF7343TRPBF vs AUIRF7343QTR |
| IRF7343ITRPBF | Transistor | International Rectifier | IRF7343TRPBF vs IRF7343ITRPBF |
| IRF7343 | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7343TRPBF vs IRF7343 |
| IRF7343IPBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | International Rectifier | IRF7343TRPBF vs IRF7343IPBF |
| AUIRF7343Q | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF7343TRPBF vs AUIRF7343Q |
| IRF7343QTRPBF | Transistor, | Infineon Technologies AG | IRF7343TRPBF vs IRF7343QTRPBF |
| IRF7343PBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7343TRPBF vs IRF7343PBF |
| IRF7343QPBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | IRF7343TRPBF vs IRF7343QPBF |