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Part Details for IRF7351TRPBF by Infineon Technologies AG
Overview of IRF7351TRPBF by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IRF7351TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9191
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Newark | Mosfet, N-Ch, 60V, 8A, 150Deg C, 2W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:8A, Continuous Drain Current Id P Channel:8A Rohs Compliant: Yes |Infineon IRF7351TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1409 |
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$0.5250 | Buy Now |
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DISTI #
86AK5376
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Newark | Mosfet, N-Ch, 60V, 8A, Soic Rohs Compliant: Yes |Infineon IRF7351TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7080 / $0.7470 | Buy Now |
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DISTI #
IRF7351TRPBFCT-ND
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DigiKey | MOSFET 2N-CH 60V 8A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
31787 In Stock |
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$0.6810 / $1.6200 | Buy Now |
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DISTI #
IRF7351TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7351TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6356 / $0.7264 | Buy Now |
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DISTI #
942-IRF7351TRPBF
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Mouser Electronics | MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual RoHS: Compliant | 27850 |
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$0.6640 / $1.6200 | Buy Now |
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DISTI #
70019627
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RS | IRF7351TRPBF Dual N-channel MOSFET Transistor, 8 A, 60 V, 8-Pin SOIC | Infineon IRF7351TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.3400 / $1.6700 | RFQ |
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Future Electronics | Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 56000Reel |
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$0.3400 | Buy Now |
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Future Electronics | Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 8000Reel |
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$0.3200 | Buy Now |
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Quest Components | 8 A, 60 V, 0.0178 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | 3200 |
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$1.0815 / $2.8840 | Buy Now |
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DISTI #
IRF7351TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7351TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.6356 / $0.7264 | Buy Now |
Part Details for IRF7351TRPBF
IRF7351TRPBF CAD Models
IRF7351TRPBF Part Data Attributes:
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IRF7351TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7351TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 325 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.0178 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7351TRPBF
This table gives cross-reference parts and alternative options found for IRF7351TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7351TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7351PBF | Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | Infineon Technologies AG | IRF7351TRPBF vs IRF7351PBF |