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Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8270
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Newark | Dual N/P Channel Mosfet, 30V, Soic, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:7.3A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7389PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IRF7389PBF-ND
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DigiKey | MOSFET N/P-CH 30V 8SO Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
|
Buy Now | |
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Win Source Electronics | HEXFET Power MOSFET | MOSFET N/P-CH 30V 8-SOIC | 5960 |
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$0.5660 / $0.8480 | Buy Now |
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IRF7389PBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF7389PBF
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 82 mJ | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7.3 A | |
Drain-source On Resistance-Max | 0.029 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7389PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7389PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7389 | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7389PBF vs IRF7389 |
IRF7389PBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7389PBF vs IRF7389PBF |
IRF7389TRPBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | IRF7389PBF vs IRF7389TRPBF |