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Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7960
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Newark | N Channel Mosfet, 40V, 9A, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7469TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2564 |
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$0.3640 / $0.3970 | Buy Now |
DISTI #
IRF7469PBFCT-ND
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DigiKey | MOSFET N-CH 40V 9A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5273 In Stock |
|
$0.3811 / $1.5300 | Buy Now |
DISTI #
IRF7469TRPBF
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Avnet Americas | Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7469TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 8000 |
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$0.2859 | Buy Now |
DISTI #
IRF7469TRPBF
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Avnet Americas | Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7469TRPBF) RoHS: Compliant Min Qty: 820 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 12000 Partner Stock |
|
$0.4001 / $0.4446 | Buy Now |
DISTI #
40M7960
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Avnet Americas | Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 40M7960) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 2564 Partner Stock |
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$0.6150 / $0.9260 | Buy Now |
DISTI #
IRF7469TRPBF
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Avnet Americas | Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7469TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2859 | Buy Now |
DISTI #
942-IRF7469TRPBF
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Mouser Electronics | MOSFETs MOSFT 40V 9A 17mOhm 15nC RoHS: Compliant | 5673 |
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$0.3810 / $0.9200 | Buy Now |
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Future Electronics | Single N-Channel 40 V 21 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Container: Reel | 4000Reel |
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$0.3550 / $0.3800 | Buy Now |
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Future Electronics | Single N-Channel 40 V 21 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.3550 / $0.3750 | Buy Now |
DISTI #
76884081
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Verical | Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Date Code: 2329 | Americas - 4000 |
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$0.3638 / $0.3786 | Buy Now |
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IRF7469TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7469TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 73 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7469TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7469TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7470PBF | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7469TRPBF vs IRF7470PBF |