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Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8
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IRF7503PBF
Infineon Technologies AG
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Datasheet
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IRF7503PBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE, MICRO-8, SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 2.4 A | |
Drain-source On Resistance-Max | 0.135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.39 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7503PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7503PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7503PBF | Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 | International Rectifier | IRF7503PBF vs IRF7503PBF |
IRF7503TRPBF | Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | IRF7503PBF vs IRF7503TRPBF |
IRF7503TRPBF | Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7503PBF vs IRF7503TRPBF |
IRF7503TR | Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7503PBF vs IRF7503TR |