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Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39M3577
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Newark | Dual N Channel Mosfet, 20V, Micro8, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:5.4A, Continuous Drain Current Id P Channel:5.4A Rohs Compliant: Yes |Infineon IRF7530TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3644 |
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$0.3880 / $0.8740 | Buy Now |
DISTI #
31K2271
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Newark | Dual N Channel Mosfet, 20V, Micro8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:5.4A, No. Of Pins:8Pins, Qualification:- Rohs Compliant: Yes |Infineon IRF7530TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3320 / $0.3400 | Buy Now |
DISTI #
IRF7530TRPBFCT-ND
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DigiKey | MOSFET 2N-CH 20V 5.4A MICRO8 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
565 In Stock |
|
$0.3191 / $0.8500 | Buy Now |
DISTI #
IRF7530TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin Micro8 T/R - Tape and Reel (Alt: IRF7530TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2978 / $0.3403 | Buy Now |
DISTI #
IRF7530TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin Micro8 T/R - Tape and Reel (Alt: IRF7530TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2978 / $0.3403 | Buy Now |
DISTI #
942-IRF7530TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL NCh 20V 5.4A Micro 8 RoHS: Compliant | 1392 |
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$0.3190 / $0.8500 | Buy Now |
DISTI #
70425763
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RS | IRF7530TRPBF Dual N-channel MOSFET Transistor, 5.4 A, 20 V, 8-Pin MSOP | Infineon IRF7530TRPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$0.5300 / $0.6600 | RFQ |
DISTI #
70017001
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RS | MOSFET, 20V, 5.400A, MICRO-8 | Infineon IRF7530TRPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$0.7500 / $0.9300 | RFQ |
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Future Electronics | Dual N-Channel 20 V 0.03 Ohm 26 nC HEXFET® Power Mosfet - MICRO-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 4000Reel |
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$0.2850 / $0.3000 | Buy Now |
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Future Electronics | Dual N-Channel 20 V 0.03 Ohm 26 nC HEXFET® Power Mosfet - MICRO-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 4000Reel |
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$0.2300 / $0.2350 | Buy Now |
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IRF7530TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7530TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
|
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, S-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 33 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5.4 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7530TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7530TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7530PBF | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 | International Rectifier | IRF7530TRPBF vs IRF7530PBF |
IRF7530TR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | IRF7530TRPBF vs IRF7530TR |
IRF7530TR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7530TRPBF vs IRF7530TR |
IRF7530PBF | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 | Infineon Technologies AG | IRF7530TRPBF vs IRF7530PBF |