Part Details for IRF7739L2TRPBF by Infineon Technologies AG
Results Overview of IRF7739L2TRPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7739L2TRPBF Information
IRF7739L2TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7739L2TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70019638
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RS | MOSFET, 40V, 270A, 1.0 MOHM, 220NC QG Min Qty: 4000 Package Multiple: 1 Container: Bulk | 0 |
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$7.4300 / $8.7400 | RFQ |
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DISTI #
IRF7739L2TRPBF
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TME | Transistor: N-MOSFET, unipolar, 40V, 270A, 125W, DirectFET Min Qty: 4000 | 0 |
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$2.7900 | RFQ |
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Chip Stock | SingleN-Channel40V1mOhm220nCHEXFET®PowerMosfet-DirectFET® | 4300 |
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RFQ |
Part Details for IRF7739L2TRPBF
IRF7739L2TRPBF CAD Models
IRF7739L2TRPBF Part Data Attributes
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IRF7739L2TRPBF
Infineon Technologies AG
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Datasheet
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IRF7739L2TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 375A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 270 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 375 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N9 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 9 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 1070 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7739L2TRPBF
This table gives cross-reference parts and alternative options found for IRF7739L2TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7739L2TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7739L2TR1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 375A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | IRF7739L2TRPBF vs IRF7739L2TR1PBF |
IRF7739L2TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7739L2TRPBF is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF7739L2TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF7739L2TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
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The maximum allowable power dissipation for the IRF7739L2TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.