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Transistors Power Field-Effect Transistors IRF7807TRPBF

Transistors
IRF7807TRPBF
Description: Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Overview of IRF7807TRPBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF7807TRPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
ComSIT USA HEXFET CHIP-SET FOR DC-DC CONVERTERS Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 4000
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Chip 1 Exchange INSTOCK 3990
RFQ

CAD Models for IRF7807TRPBF by International Rectifier
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Part Data Attributes for IRF7807TRPBF by International Rectifier
Parametric Data

IRF7807TRPBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOT
Package Description
SO-8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
8.3 A
Drain-source On Resistance-Max
0.025 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
66 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7807TRPBF
    International Rectifier
    Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
    VS

Alternate Parts for IRF7807TRPBF

This table gives cross-reference parts and alternative options found for IRF7807TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7807TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7807TRPBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7807TRPBF vs IRF7807TRPBF-1
IRF7807PBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7807TRPBF vs IRF7807PBF
IRF7807PBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 International Rectifier IRF7807TRPBF vs IRF7807PBF-1
IRF7807PBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7807TRPBF vs IRF7807PBF-1
IRF7807TRPBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 International Rectifier IRF7807TRPBF vs IRF7807TRPBF-1
IRF7807TR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 International Rectifier IRF7807TRPBF vs IRF7807TR
Part Number Description Manufacturer Compare
IRF7807PBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7807TRPBF vs IRF7807PBF
IRF7807ATRPBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 International Rectifier IRF7807TRPBF vs IRF7807ATRPBF-1
IRF7807ATRPBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7807TRPBF vs IRF7807ATRPBF-1
IRF7807PBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 International Rectifier IRF7807TRPBF vs IRF7807PBF-1
IRF7807TRPBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7807TRPBF vs IRF7807TRPBF-1
IRF7807APBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7807TRPBF vs IRF7807APBF
IRF7807APBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7807TRPBF vs IRF7807APBF-1
IRF7807TRPBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 International Rectifier IRF7807TRPBF vs IRF7807TRPBF-1
IRF7807PBF-1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7807TRPBF vs IRF7807PBF-1
IRF7807 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7807TRPBF vs IRF7807

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