Part Details for IRF7831TRPBF by Infineon Technologies AG
Results Overview of IRF7831TRPBF by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF7831TRPBF Information
IRF7831TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7831TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2947033RL
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Farnell | MOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W COO: TH RoHS: Compliant Min Qty: 50 Lead time: 40 Weeks, 1 Days Container: Reel | 124 |
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$1.3291 | Buy Now |
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DISTI #
2947033
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Farnell | MOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W COO: TH RoHS: Compliant Min Qty: 5 Lead time: 40 Weeks, 1 Days Container: Cut Tape | 124 |
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$1.3291 / $2.0923 | Buy Now |
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DISTI #
4318775
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Farnell | MOSFET, N-CH, 30V, 21A, SOIC COO: TH RoHS: Compliant Min Qty: 4000 Lead time: 40 Weeks, 1 Days Container: Reel | 0 |
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$0.4790 / $0.4882 | Buy Now |
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DISTI #
70018969
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RS | MOSFET, 30V, 21A, 3.6 MOHM, 40 NC QG, SO-8 Min Qty: 4000 Package Multiple: 1 Container: Bulk | 0 |
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$1.5810 / $1.8600 | RFQ |
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Rochester Electronics | IRF7831 - MOSFET N-Channel Single 30V 21A RoHS: Compliant Status: Obsolete Min Qty: 1 | Call for Availability |
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$0.3873 / $0.6247 | Buy Now |
Part Details for IRF7831TRPBF
IRF7831TRPBF CAD Models
IRF7831TRPBF Part Data Attributes
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IRF7831TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRF7831TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, SOP-8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.0036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 170 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7831TRPBF
This table gives cross-reference parts and alternative options found for IRF7831TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7831TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7831 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7831TRPBF vs IRF7831 |
IRF7831TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7831TRPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF7831TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF7831TRPBF from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in anti-static packaging.
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The maximum allowable power dissipation for the IRF7831TRPBF is 150W, but this can be increased with proper heat sinking and thermal management.