Datasheets
IRF7834TRPBF by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRF7834TRPBF by Infineon Technologies AG

Overview of IRF7834TRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IRF7834TRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7834TRPBF
TME Transistor: N-MOSFET, unipolar, 30V, 19A, 2.5W, SO8 Min Qty: 4000 0
  • 4,000 $0.5640
$0.5640 RFQ

Part Details for IRF7834TRPBF

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IRF7834TRPBF Part Data Attributes:

IRF7834TRPBF Infineon Technologies AG
Buy Now Datasheet
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IRF7834TRPBF Infineon Technologies AG Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Configuration SINGLE
Drain Current-Max (ID) 19 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

Alternate Parts for IRF7834TRPBF

This table gives cross-reference parts and alternative options found for IRF7834TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7834TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7834 Power Field-Effect Transistor, 19A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7834TRPBF vs IRF7834
Part Number Description Manufacturer Compare
AF4362NSLA Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Integrated Circuit Technology Corp IRF7834TRPBF vs AF4362NSLA
AF4362NSL Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Integrated Circuit Technology Corp IRF7834TRPBF vs AF4362NSL

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