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Transistors Power Field-Effect Transistors IRF820PBF

Transistors
IRF820PBF
Description: Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Overview of IRF820PBF by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRF820PBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRF820PBF-ND
DigiKey MOSFET N-CH 500V 2.5A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube 674
In Stock
  • 1 $1.9400
  • 50 $0.8616
  • 100 $0.7772
  • 500 $0.6624
  • 1,000 $0.5932
  • 2,000 $0.5598
  • 5,000 $0.5091
  • 10,000 $0.5065
$0.5065 / $1.9400 Buy Now
DISTI # 70459409
RS MOSFET N-CH 500V 2.5A TO-220AB | Siliconix / Vishay IRF820PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk 0
  • 1,000 $1.0000
  • 10,000 $0.9500
  • 50,000 $0.9000
  • 100,000 $0.8500
$0.8500 / $1.0000 RFQ
Quest Components 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 303
  • 1 $1.3500
  • 75 $0.6750
  • 297 $0.5400
$0.5400 / $1.3500 Buy Now

CAD Models for IRF820PBF by Vishay Siliconix
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Part Data Attributes for IRF820PBF by Vishay Siliconix
Parametric Data

IRF820PBF
Vishay Siliconix
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-220AB
Package Description
ROHS COMPLIANT PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
210 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
2.5 A
Drain-source On Resistance-Max
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF820PBF
    Vishay Siliconix
    Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
    VS

Alternate Parts for IRF820PBF

This table gives cross-reference parts and alternative options found for IRF820PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF820PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF820 IRF820 Texas Instruments IRF820PBF vs IRF820
IRF820 IRF820 onsemi IRF820PBF vs IRF820
IRF820 TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2.5A I(D),TO-220AB National Semiconductor Corporation IRF820PBF vs IRF820
RFP3N45 3A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF820PBF vs RFP3N45
IRF821 2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF820PBF vs IRF821
IRF823 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF820PBF vs IRF823
IRF820 2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF820PBF vs IRF820
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRF820PBF vs BUZ74
IRF820 2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF820PBF vs IRF820
IRF820PBF Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF820PBF vs IRF820PBF
Part Number Description Manufacturer Compare
IRF821 3A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF820PBF vs IRF821
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRF820PBF vs BUZ74
MTP1N45 1A, 450V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF820PBF vs MTP1N45
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IRF820PBF vs BUZ74
IRF820PBF Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF820PBF vs IRF820PBF
RFP3N45 Power Field-Effect Transistor, 3A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF820PBF vs RFP3N45
IRF823 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF820PBF vs IRF823
IRF821 2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF820PBF vs IRF821
IRF822 Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF820PBF vs IRF822
IRF822 2.8A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF820PBF vs IRF822

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