There are no models available for this part yet.
Overview of IRF830BPBF by Vishay Siliconix
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF830BPBF by Vishay Siliconix
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRF830BPBF-ND
|
DigiKey | MOSFET N-CH 500V 5.3A TO220AB Min Qty: 1 Lead time: 14 Weeks Container: Tube |
2588 In Stock |
|
$0.4038 / $1.1500 | Buy Now |
CAD Models for IRF830BPBF by Vishay Siliconix
Part Data Attributes for IRF830BPBF by Vishay Siliconix
|
|
|
|---|---|
|
Part Life Cycle Code
|
End Of Life
|
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Vishay
|
|
Avalanche Energy Rating (Eas)
|
28.8 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
500 V
|
|
Drain Current-Max (ID)
|
5.3 A
|
|
Drain-source On Resistance-Max
|
1.5 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
6 pF
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
104 W
|
|
Pulsed Drain Current-Max (IDM)
|
10 A
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
MATTE TIN OVER NICKEL
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
50 ns
|
|
Turn-on Time-Max (ton)
|
46 ns
|
Alternate Parts for IRF830BPBF
This table gives cross-reference parts and alternative options found for IRF830BPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830BPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STB5NC50-1 | 5.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | IRF830BPBF vs STB5NC50-1 |
| 5N50G-T2Q-T | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | IRF830BPBF vs 5N50G-T2Q-T |
| PJU5NA50_T0_00001 | Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | PanJit Semiconductor | IRF830BPBF vs PJU5NA50_T0_00001 |
| 2N7290H3 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | IRF830BPBF vs 2N7290H3 |
| 2N7290D3 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | IRF830BPBF vs 2N7290D3 |
| 2N7290D4 | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | Intersil Corporation | IRF830BPBF vs 2N7290D4 |
| 5N50L-TN3-R | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | IRF830BPBF vs 5N50L-TN3-R |
| SIHP5N50D-GE3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF830BPBF vs SIHP5N50D-GE3 |
| 5N50L-T2Q-T | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | IRF830BPBF vs 5N50L-T2Q-T |
| KF5N50PZ | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | IRF830BPBF vs KF5N50PZ |