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Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
38K2862
|
Newark | Mosfet, N, 500V, 8A, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:500V, On Resistance Rds(On):0.85Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Vishay IRF840PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1731 |
|
$1.0900 / $1.7000 | Buy Now |
DISTI #
63J7418
|
Newark | N Channel Mosfet, 500V, 8A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:8A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRF840PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 463 |
|
$1.1400 / $1.4300 | Buy Now |
DISTI #
96AC0299
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Newark | Mosfet N-Channel 500V Rohs Compliant: No |Vishay IRF840PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.0700 | Buy Now |
DISTI #
IRF840PBF
|
Avnet Americas | MOSFET N-CHANNEL 500V - Bulk (Alt: IRF840PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Bulk | 118565 |
|
$0.6530 | Buy Now |
DISTI #
63J7418
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Avnet Americas | MOSFET N-CHANNEL 500V - Bulk (Alt: 63J7418) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Bulk | 463 Partner Stock |
|
$1.2400 / $1.7900 | Buy Now |
DISTI #
844-IRF840PBF
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Mouser Electronics | MOSFETs TO220 500V 8A N-CH MOSFET RoHS: Compliant | 0 |
|
$1.0600 / $1.8000 | Order Now |
DISTI #
70078869
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RS | MOSFET, Power, N-Ch, VDSS 500V, RDS(ON) 0.85Ohm, ID 8A, TO-220AB, PD 125W, VGS +/-20V | Vishay PCS IRF840PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 1348 |
|
$1.3900 / $1.8500 | Buy Now |
|
Future Electronics | Single N-Channel 500 V 0.85 Ω Flange Mount Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 13033Tube |
|
$0.7100 / $0.8750 | Buy Now |
|
Future Electronics | Single N-Channel 500 V 0.85 Ω Flange Mount Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 3696Tube |
|
$0.7100 / $0.8750 | Buy Now |
|
Future Electronics | Single N-Channel 500 V 0.85 Ω Flange Mount Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.7100 / $0.8400 | Buy Now |
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IRF840PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF840PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 4 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 510 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |