IRF842
Description: TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,7A I(D),TO-220AB

Overview of IRF842 by Intersil Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

CAD Models for IRF842 by Intersil Corporation
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Part Data Attributes for IRF842 by Intersil Corporation

IRF842
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Configuration
SINGLE
Drain Current-Max (ID)
7 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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  1. IRF842
    Intersil Corporation
    TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,7A I(D),TO-220AB
    VS

Alternate Parts for IRF842

This table gives cross-reference parts and alternative options found for IRF842. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF842, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF841 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF842 vs IRF841
BUZ40B Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IRF842 vs BUZ40B
IRF841 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-220AB Intersil Corporation IRF842 vs IRF841
IRF841 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF842 vs IRF841
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF842 vs IRF841
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF842 vs IRF843
MTP8N50 Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF842 vs MTP8N50
IRF842-010 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF842 vs IRF842-010
IRF843 7A, 450V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF842 vs IRF843
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRF842 vs MTP8N50E
Part Number Description Manufacturer Compare
IRF841 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF842 vs IRF841
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF842 vs IRF842
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF842 vs IRF840
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF842 vs IRF842
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF842 vs IRF843
IRF841 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-220AB Intersil Corporation IRF842 vs IRF841
IRF842-001 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF842 vs IRF842-001
IRF841-006 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF842 vs IRF841-006
IRF840 Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF842 vs IRF840
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF842 vs IRF842

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