IRF843-009
Description: Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of IRF843-009 by International Rectifier

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Part Data Attributes for IRF843-009 by International Rectifier

IRF843-009
International Rectifier
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
450 V
Drain Current-Max (ID)
7 A
Drain-source On Resistance-Max
1.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
28 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
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  1. IRF843-009
    International Rectifier
    Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

Alternate Parts for IRF843-009

This table gives cross-reference parts and alternative options found for IRF843-009. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF843-009, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF841 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF843-009 vs IRF841
BUZ40B Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IRF843-009 vs BUZ40B
IRF841 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-220AB Intersil Corporation IRF843-009 vs IRF841
IRF841 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF843-009 vs IRF841
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF843-009 vs IRF841
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF843-009 vs IRF843
MTP8N50 Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF843-009 vs MTP8N50
IRF842-010 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF843-009 vs IRF842-010
IRF843 7A, 450V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF843-009 vs IRF843
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRF843-009 vs MTP8N50E
Part Number Description Manufacturer Compare
IRF841 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF843-009 vs IRF841
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF843-009 vs IRF842
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF843-009 vs IRF840
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF843-009 vs IRF842
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF843-009 vs IRF843
IRF841 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-220AB Intersil Corporation IRF843-009 vs IRF841
IRF842-001 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF843-009 vs IRF842-001
IRF841-006 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF843-009 vs IRF841-006
IRF840 Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF843-009 vs IRF840
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF843-009 vs IRF842

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