IRF843
Description: 7A, 450V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Overview of IRF843 by Rochester Electronics LLC

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Part Data Attributes for IRF843 by Rochester Electronics LLC

IRF843
Rochester Electronics LLC
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
450 V
Drain Current-Max (ID)
7 A
Drain-source On Resistance-Max
1.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
28 A
Qualification Status
COMMERCIAL
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF843
    Rochester Electronics LLC
    7A, 450V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    VS

Alternate Parts for IRF843

This table gives cross-reference parts and alternative options found for IRF843. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF843, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF840LC Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF843 vs IRF840LC
2SK1865 TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRF843 vs 2SK1865
IRF840-006 Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF843 vs IRF840-006
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRF843 vs IRF841
IRF840 IRF840 onsemi IRF843 vs IRF840
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN Rochester Electronics LLC IRF843 vs MTP8N50E
IRF841 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF843 vs IRF841
IRF842 7A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF843 vs IRF842
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF843 vs MTP8N50E
IRF840-010 Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF843 vs IRF840-010
Part Number Description Manufacturer Compare
IRF842-006 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF843 vs IRF842-006
IRF840-010 Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF843 vs IRF840-010
IRF840LCPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF843 vs IRF840LCPBF
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF843 vs IRF840
IRF842-009 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF843 vs IRF842-009
IRF842 7A, 500V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF843 vs IRF842
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF843 vs IRF840
BUK457-500B TRANSISTOR 9 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power NXP Semiconductors IRF843 vs BUK457-500B
IRF841-006 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF843 vs IRF841-006
IRF840A Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF843 vs IRF840A

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