IRF9230R1
Description: 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3

Overview of IRF9230R1 by TT Electronics Power and Hybrid / Semelab Limited

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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

CAD Models for IRF9230R1 by TT Electronics Power and Hybrid / Semelab Limited
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Part Data Attributes for IRF9230R1 by TT Electronics Power and Hybrid / Semelab Limited

IRF9230R1
TT Electronics Power and Hybrid / Semelab Limited
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
SEMELAB LTD
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
66 mJ
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
6.5 A
Drain-source On Resistance-Max
0.92 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
28 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN SILVER COPPER
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF9230R1
    TT Electronics Power and Hybrid / Semelab Limited
    6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
    VS

Alternate Parts for IRF9230R1

This table gives cross-reference parts and alternative options found for IRF9230R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9230R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, Microsemi Corporation IRF9230R1 vs JANTX2N6806
JANHCA2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG IRF9230R1 vs JANHCA2N6806
IRF9230 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9230R1 vs IRF9230
JANTXV2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF9230R1 vs JANTXV2N6806
IRF9230 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF9230R1 vs IRF9230
2N6806PBF Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9230R1 vs 2N6806PBF
2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF9230R1 vs 2N6806
IRF9230R1 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF9230R1 vs IRF9230R1
JANTXV2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, Microsemi Corporation IRF9230R1 vs JANTXV2N6806
IRF9230 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF9230R1 vs IRF9230
Part Number Description Manufacturer Compare
IRF9230 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF9230R1 vs IRF9230
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9230R1 vs IRF9232
IRF9240SMD-JQR-B Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors IRF9230R1 vs IRF9240SMD-JQR-B
IRF9240ED Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF9230R1 vs IRF9240ED
IRF9240 11A, 200V, 0.58ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF9230R1 vs IRF9240
MTM8P20 Power Field-Effect Transistor, 8A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF9230R1 vs MTM8P20
IRF9240PBF Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF9230R1 vs IRF9240PBF
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9230R1 vs IRF9232
2N6806PBF Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9230R1 vs 2N6806PBF
RFM5P12 Power Field-Effect Transistor, 5A I(D), 120V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9230R1 vs RFM5P12

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