Part Details for IRF9233 by Harris Semiconductor
Overview of IRF9233 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF9233
IRF9233 CAD Models
IRF9233 Part Data Attributes
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IRF9233
Harris Semiconductor
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Datasheet
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IRF9233
Harris Semiconductor
Power Field-Effect Transistor, 5.5A I(D), 150V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 180 ns | |
| Turn-on Time-Max (ton) | 150 ns |
Alternate Parts for IRF9233
This table gives cross-reference parts and alternative options found for IRF9233. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9233, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9230 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | IRF9233 vs IRF9230 |
| IRF9232 | Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF9233 vs IRF9232 |
| IRF9240SMD-JQR-B | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Resistors | IRF9233 vs IRF9240SMD-JQR-B |
| IRF9240ED | Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Infineon Technologies AG | IRF9233 vs IRF9240ED |
| IRF9240 | 11A, 200V, 0.58ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | IRF9233 vs IRF9240 |
| MTM8P20 | Power Field-Effect Transistor, 8A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | IRF9233 vs MTM8P20 |
| IRF9240PBF | Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRF9233 vs IRF9240PBF |
| IRF9232 | Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF9233 vs IRF9232 |
| 2N6806PBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF9233 vs 2N6806PBF |
| RFM5P12 | Power Field-Effect Transistor, 5A I(D), 120V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF9233 vs RFM5P12 |