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Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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IRF9310TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
71R6181
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Newark | P Channel, Mosfet, -30V, -20A, Soic, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.5W Rohs Compliant: Yes |Infineon IRF9310TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 4000 |
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$0.4570 / $0.4680 | Buy Now |
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DISTI #
79R7547
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Newark | P Channel, Mosfet, -30V, -20A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Infineon IRF9310TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5600 / $1.8100 | Buy Now |
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DISTI #
IRF9310TRPBF
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Avnet Americas | - Tape and Reel (Alt: IRF9310TRPBF) COO: Israel RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 16000 |
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$0.2418 / $0.2600 | Buy Now |
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DISTI #
70019236
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RS | IRF9310TRPBF P-CHANNEL MOSFET TRANSISTOR, 20 A, 30 V, 8-PIN SOIC Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.2100 / $1.3500 | RFQ |
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Bristol Electronics | 60 |
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RFQ | ||
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Rochester Electronics | IRF9310PbF - 30V Single N-Channel HEXFET Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 4001 |
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$0.3853 / $0.6215 | Buy Now |
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DISTI #
IRF9310TRPBF
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TME | Transistor: P-MOSFET, unipolar, -30V, -20A, 2.5W, SO8 Min Qty: 1 | 606 |
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$0.4400 / $1.7000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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DISTI #
TMOSP12046
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Rutronik | P-CH 30V 20A 3,9mOhm SO-8 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel |
Stock DE - 4000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4102 / $0.5318 | Buy Now |
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Chip Stock | SingleP-Channel30V6.8mOhm58nCHEXFET®PowerMosfet-SOIC-8 | 70500 |
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RFQ |
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IRF9310TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9310TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Package Description | Sop-8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 630 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0046 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 880 Pf | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for IRF9310TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9310TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9310TRPBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor | IRF9310TRPBF vs IRF9310TRPBF-1 |
| FDS6681Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | IRF9310TRPBF vs FDS6681Z |
The maximum operating temperature range for the IRF9310TRPBF is -55°C to 175°C.
The IRF9310TRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
The maximum current rating for the IRF9310TRPBF is 23A.
Yes, the IRF9310TRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The IRF9310TRPBF comes in a TO-220AB package.