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Transistors Power Field-Effect Transistors IRF9510

IRF9510
Description: Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Overview of IRF9510 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF9510 by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   80
RFQ
Bristol Electronics   Min Qty: 7 34
  • 7 $0.7500
  • 28 $0.4875
$0.4875 / $0.7500 Buy Now
ES Components 0 289 in Stock
RFQ

CAD Models for IRF9510 by International Rectifier
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Part Data Attributes for IRF9510 by International Rectifier
Parametric Data

IRF9510
International Rectifier
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
4 A
Drain-source On Resistance-Max
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
225
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
43 W
Power Dissipation-Max (Abs)
43 W
Pulsed Drain Current-Max (IDM)
12 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF9510
    International Rectifier
    Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    VS

Alternate Parts for IRF9510

This table gives cross-reference parts and alternative options found for IRF9510. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF9510PBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF9510 vs IRF9510PBF
IRF9510 Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation IRF9510 vs IRF9510
IRF9510PBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF9510 vs IRF9510PBF
IRF9510 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF9510 vs IRF9510
IRF9510PBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF9510 vs IRF9510PBF
Part Number Description Manufacturer Compare
IRF9510 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF9510 vs IRF9510
IRF9510PBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF9510 vs IRF9510PBF
IRF9510 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRF9510 vs IRF9510
IRF9510 Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation IRF9510 vs IRF9510
IRF9510PBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF9510 vs IRF9510PBF

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