Manufacturer | Description | Price Range | Set Alert | Details |
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Harris Semiconductor | Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $0.8219 / $3.8700 |
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Vishay Intertechnologies | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Vishay Siliconix | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $1.9000 / $3.7500 |
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International Rectifier | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $1.0000 / $6.0900 |
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New Jersey Semiconductor Products, Inc. | $2.3144 / $5.6448 |
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New Jersey Semiconductor Products Inc | MOSFET Transistor, P-Channel, TO-220AB | $3.0240 / $7.5600 |
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Honest Han | - |
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Intersil Corporation | 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Rochester Electronics LLC | 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Samsung Semiconductor | Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Thomson Consumer Electronics | Transistor |
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