Part Details for IRF9532 by Samsung Semiconductor
Overview of IRF9532 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRF9532
IRF9532 CAD Models
IRF9532 Part Data Attributes
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IRF9532
Samsung Semiconductor
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Datasheet
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IRF9532
Samsung Semiconductor
Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | SFM | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 550 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 280 ns | |
Turn-on Time-Max (ton) | 200 ns |
Alternate Parts for IRF9532
This table gives cross-reference parts and alternative options found for IRF9532. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9532, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFP8P10 | Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF9532 vs RFP8P10 |
MTP8P08 | Power Field-Effect Transistor, 8A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF9532 vs MTP8P08 |
IRF9532 | Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF9532 vs IRF9532 |
RFP8P10 | 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9532 vs RFP8P10 |
IRF9532 | 10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF9532 vs IRF9532 |
MTP8P08 | 8A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF9532 vs MTP8P08 |
IRF9532 | 10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9532 vs IRF9532 |