Datasheets
IRF9540N by:

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF9540N by International Rectifier

Overview of IRF9540N by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF9540N

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 47
  • 3 $2.4000
  • 10 $1.8000
  • 29 $1.5000
$1.5000 / $2.4000 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-220AB 15
  • 1 $1.1400
  • 5 $0.9500
$0.9500 / $1.1400 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-220AB 37
  • 1 $3.2000
  • 3 $2.4000
  • 11 $2.0000
$2.0000 / $3.2000 Buy Now
Velocity Electronics Our Stock 104
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 17
  • 1 $3.0800
  • 100 $2.3100
  • 1,000 $2.0000
$2.0000 / $3.0800 Buy Now
Win Source Electronics Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) 625000
  • 145 $0.3480
  • 350 $0.2860
  • 545 $0.2770
  • 750 $0.2680
  • 970 $0.2590
  • 1,295 $0.2320
$0.2320 / $0.3480 Buy Now

Part Details for IRF9540N

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IRF9540N Part Data Attributes

IRF9540N International Rectifier
Buy Now Datasheet
Compare Parts:
IRF9540N International Rectifier Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, FAST SWITCHING
Avalanche Energy Rating (Eas) 430 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 94 W
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9540N

This table gives cross-reference parts and alternative options found for IRF9540N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9540N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9540NPBF Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF9540N vs IRF9540NPBF
AUIRF9540N Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF9540N vs AUIRF9540N
IRF9540NPBF Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF9540N vs IRF9540NPBF
Part Number Description Manufacturer Compare
IRFP9150 25A, 100V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRF9540N vs IRFP9150
AUIRF9540N Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF9540N vs AUIRF9540N
IRF9540NPBF Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF9540N vs IRF9540NPBF
IRF9540NPBF Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF9540N vs IRF9540NPBF
IRFP9150 Power Field-Effect Transistor, 25A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor IRF9540N vs IRFP9150
IRFP9151 Power Field-Effect Transistor, 25A I(D), 80V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor IRF9540N vs IRFP9151
FX30UM-2 Power Field-Effect Transistor, 30A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Powerex Power Semiconductors IRF9540N vs FX30UM-2

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