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Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
25M9854
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Newark | Mosfet, P-Ch, 100V, 23A, 150Deg C, 140W, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:23A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF9540NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 17321 |
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$0.8130 | Buy Now |
DISTI #
86AK5403
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Newark | Mosfet, P-Ch, 100V, 23A, To-263 Rohs Compliant: Yes |Infineon IRF9540NSTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.8600 / $1.0300 | Buy Now |
DISTI #
IRF9540NSTRLPBFCT-ND
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DigiKey | MOSFET P-CH 100V 23A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3620 In Stock |
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$0.8279 / $1.9100 | Buy Now |
DISTI #
IRF9540NSTRLPBF
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Avnet Americas | Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF9540NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 6400 |
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$0.7472 / $0.9073 | Buy Now |
DISTI #
IRF9540NSTRLPBF
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Avnet Americas | Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF9540NSTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.7472 / $0.9073 | Buy Now |
DISTI #
25M9854
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Avnet Americas | Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 25M9854) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 3612 Partner Stock |
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$1.4300 / $2.1000 | Buy Now |
DISTI #
942-IRF9540NSTRLPBF
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Mouser Electronics | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC RoHS: Compliant | 2887 |
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$0.8270 / $1.9100 | Buy Now |
DISTI #
70017730
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RS | MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.117Ohm, ID -23A, D2Pak, PD 110W, VGS +/-20V | Infineon IRF9540NSTRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.5100 / $1.7700 | RFQ |
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Future Electronics | Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK RoHS: Non Compliant pbFree: No Min Qty: 800 Package Multiple: 800 Container: Reel | 2400Reel |
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$0.7600 / $0.8200 | Buy Now |
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Future Electronics | Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK RoHS: Non Compliant pbFree: No Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
|
$0.7600 / $0.8200 | Buy Now |
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IRF9540NSTRLPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF9540NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 84 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.117 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 92 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF9540NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9540NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF9540NS | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | International Rectifier | IRF9540NSTRLPBF vs IRF9540NS |
IRF9540NSTRRPBF | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRF9540NSTRLPBF vs IRF9540NSTRRPBF |
IRF9540NS | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRF9540NSTRLPBF vs IRF9540NS |
IRF9540NSTRL | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | International Rectifier | IRF9540NSTRLPBF vs IRF9540NSTRL |
IRF9540NSTRLPBF | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRF9540NSTRLPBF vs IRF9540NSTRLPBF |
IRF9540NSPBF | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRF9540NSTRLPBF vs IRF9540NSPBF |
IRF9540NSTRRPBF | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRF9540NSTRLPBF vs IRF9540NSTRRPBF |