Datasheets
IRF9622 by:

Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRF9622 by Samsung Semiconductor

Overview of IRF9622 by Samsung Semiconductor

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Part Details for IRF9622

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IRF9622 Part Data Attributes

IRF9622 Samsung Semiconductor
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IRF9622 Samsung Semiconductor Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 270 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 2.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 90 ns

Alternate Parts for IRF9622

This table gives cross-reference parts and alternative options found for IRF9622. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9622, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9622 Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF9622 vs IRF9622
Part Number Description Manufacturer Compare
SPP07N60CFDHKSA1 Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRF9622 vs SPP07N60CFDHKSA1
SGSP492 40A, 50V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics IRF9622 vs SGSP492
IRF9632 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF9622 vs IRF9632
STW25NM60ND N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package STMicroelectronics IRF9622 vs STW25NM60ND
IRF9612 Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF9622 vs IRF9612
IRF9632 5.5A, 200V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF9622 vs IRF9632
VP1120N5 Power Field-Effect Transistor, 1.8A I(D), 200V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc IRF9622 vs VP1120N5
APT5010B2FLC 47A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3 Microsemi Corporation IRF9622 vs APT5010B2FLC
APT5010B2FLC Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Advanced Power Technology IRF9622 vs APT5010B2FLC
FQY45N50F Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, 247, 3 PIN Fairchild Semiconductor Corporation IRF9622 vs FQY45N50F

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