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Part Details for IRF9Z34N by Infineon Technologies AG
Overview of IRF9Z34N by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRF9Z34N
IRF9Z34N CAD Models
IRF9Z34N Part Data Attributes:
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IRF9Z34N
Infineon Technologies AG
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Datasheet
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IRF9Z34N
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220AB, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z34N
This table gives cross-reference parts and alternative options found for IRF9Z34N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRF9Z34N | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | IRF9Z34N vs AUIRF9Z34N |
| IRF9Z34NPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRF9Z34N vs IRF9Z34NPBF |
| IRF9Z34NPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF9Z34N vs IRF9Z34NPBF |
| AUIRF9Z34N | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRF9Z34N vs AUIRF9Z34N |
| IRF9Z34N | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF9Z34N vs IRF9Z34N |