Part Details for IRFB11N50APBF-BE3 by Vishay Intertechnologies
Overview of IRFB11N50APBF-BE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFB11N50APBF-BE3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
78AH6357
|
Newark | Mosfet, N-Ch, 500V, 11A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:11A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFB11N50APBF-BE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.3400 / $1.5000 | Buy Now |
DISTI #
IRFB11N50APBF-BE3
|
Avnet Americas | Transistor MOSFET N-Channel 500V 11A 3-Pin TO-220 - Rail/Tube (Alt: IRFB11N50APBF-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Tube | 0 |
|
$1.0483 / $1.3317 | Buy Now |
DISTI #
78-IRFB11N50APBF-BE3
|
Mouser Electronics | MOSFET 500V N-CH HEXFET RoHS: Compliant | 2889 |
|
$1.1500 / $2.1000 | Buy Now |
|
Future Electronics | 500V,11A,520MOHM,TO-220 - COO: TAIWAN RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube | 1000Tube |
|
$0.9900 / $1.0700 | Buy Now |
DISTI #
IRFB11N50APBF-BE3
|
TTI | MOSFET 500V N-CH HEXFET pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 3650 In Stock |
|
$1.0300 / $1.7300 | Buy Now |
DISTI #
IRFB11N50APBF-BE3
|
EBV Elektronik | Transistor MOSFET N-Channel 500V 11A 3-Pin TO-220 (Alt: IRFB11N50APBF-BE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IRFB11N50APBF-BE3
IRFB11N50APBF-BE3 CAD Models
IRFB11N50APBF-BE3 Part Data Attributes
|
IRFB11N50APBF-BE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRFB11N50APBF-BE3
Vishay Intertechnologies
Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 275 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.52 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 8.1 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |