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Transistors Power Field-Effect Transistors IRFB31N20D

IRFB31N20D
Description: Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Overview of IRFB31N20D by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRFB31N20D by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 151
  • 1 $10.2537
  • 11 $6.8358
  • 38 $6.3231
$6.3231 / $10.2537 Buy Now
ComSIT USA SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Stock EU - 800
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 55746
  • 18 $2.8260
  • 44 $2.3190
  • 67 $2.2470
  • 92 $2.1740
  • 119 $2.1020
  • 160 $1.8840
$1.8840 / $2.8260 Buy Now

CAD Models for IRFB31N20D by International Rectifier
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Part Data Attributes for IRFB31N20D by International Rectifier
Parametric Data

IRFB31N20D
International Rectifier
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
420 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
31 A
Drain-source On Resistance-Max
0.082 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
Pulsed Drain Current-Max (IDM)
124 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFB31N20D
    International Rectifier
    Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
    VS

Alternate Parts for IRFB31N20D

This table gives cross-reference parts and alternative options found for IRFB31N20D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB31N20D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFB31N20DPBF Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRFB31N20D vs IRFB31N20DPBF
IRFB31N20DPBF Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB31N20D vs IRFB31N20DPBF
Part Number Description Manufacturer Compare
IRFB31N20DPBF Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRFB31N20D vs IRFB31N20DPBF
IRFB30N20DPBF Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRFB31N20D vs IRFB30N20DPBF
2N7302 Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA Harris Semiconductor IRFB31N20D vs 2N7302
IRFSL31N20DPBF Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IRFB31N20D vs IRFSL31N20DPBF
SFF250 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, MILPACK-3 Solid State Devices Inc (SSDI) IRFB31N20D vs SFF250
IPB80N03S4L03ATMA1 Power Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRFB31N20D vs IPB80N03S4L03ATMA1

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