IRFB3306GPBF
Description: Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

Overview of IRFB3306GPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 11 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IRFB3306GPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 448-IRFB3306GPBF-ND
DigiKey MOSFET N-CH 60V 120A TO220AB Min Qty: 1000 Lead time: 12 Weeks Container: Tube Limited Supply - Call
  • 1,000 $0.8771
$0.8771 Buy Now
DISTI # IRFB3306GPBF
Avnet Americas Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3306GPBF) RoHS: Compliant Min Qty: 385 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 977 Partner Stock
  • 1 $0.9485
  • 25 $0.9295
  • 100 $0.8916
  • 500 $0.8537
  • 1,000 $0.8062
$0.8062 / $0.9485 Buy Now
DISTI # IRFB3306GPBF
Avnet Americas Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3306GPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Container: Tube 0
  • 1,000 $0.9200
$0.9200 Buy Now
DISTI # 70019673
RS IRFB3306GPBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB | Infineon IRFB3306GPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $1.4500
  • 50 $1.3800
  • 250 $1.3100
  • 500 $1.2400
$1.2400 / $1.4500 RFQ
DISTI # 76455963
Verical Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 9 Package Multiple: 1 Date Code: 2315 Americas - 999
  • 10 $1.0512
  • 100 $0.9551
  • 500 $0.8913
  • 1,000 $0.8803
$0.8803 / $1.0512 Buy Now
DISTI # 62363581
Verical Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 10 Package Multiple: 1 Date Code: 2149 Americas - 16
  • 10 $0.7162
  • 100 $0.6898
  • 500 $0.6704
  • 1,000 $0.6667
$0.6667 / $0.7162 Buy Now
Rochester Electronics IRFB3306GPBF - TRENCH 40<-<100V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 13
  • 1 $0.9485
  • 25 $0.9295
  • 100 $0.8916
  • 500 $0.8537
  • 1,000 $0.8062
$0.8062 / $0.9485 Buy Now
DISTI # C1S322000488377
Chip1Stop Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant 1000
  • 1 $4.6200
  • 10 $1.4500
  • 25 $1.3200
  • 100 $1.1000
  • 250 $0.8000
  • 1,000 $0.7180
$0.7180 / $4.6200 Buy Now
DISTI # C1S322001044189
Chip1Stop MOSFET RoHS: Compliant pbFree: No 16
  • 1 $0.9640
$0.9640 Buy Now
DISTI # SP001555952
EBV Elektronik Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB (Alt: SP001555952) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 120A 4.2m75A10V 230W 4V150uA 1 N-Channel TO-220AB-3 MOSFETs ROHS 5864
  • 1 $0.5818
  • 10 $0.5123
  • 50 $0.4775
  • 100 $0.4427
  • 500 $0.4221
  • 1,000 $0.4111
$0.4111 / $0.5818 Buy Now

CAD Models for IRFB3306GPBF by Infineon Technologies AG
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Part Data Attributes for IRFB3306GPBF by Infineon Technologies AG

IRFB3306GPBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
184 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
120 A
Drain-source On Resistance-Max
0.0042 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
Pulsed Drain Current-Max (IDM)
620 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFB3306GPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
    VS

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