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Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
11N7901
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Newark | Mosfet, N, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.00734Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Pd:140W, Rohs Compliant: Yes |Infineon IRFB3607PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 546 |
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$0.4670 / $1.2300 | Buy Now |
DISTI #
IRFB3607PBF-ND
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DigiKey | MOSFET N-CH 75V 80A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
3633 In Stock |
|
$0.4494 / $1.2000 | Buy Now |
DISTI #
IRFB3607PBF
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3607PBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 100 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
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$0.4037 / $0.4934 | Buy Now |
DISTI #
942-IRFB3607PBF
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Mouser Electronics | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg RoHS: Compliant | 1949 |
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$0.4490 / $1.2000 | Buy Now |
DISTI #
70017890
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RS | MOSFET, Power, N-Ch, VDSS 75V, RDS(ON) 7.34 Milliohms, ID 80A, TO-220AB, PD 140W,-55C | Infineon IRFB3607PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$0.9900 / $1.2400 | RFQ |
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Future Electronics | Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube | 1300Tube |
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$0.3200 / $0.3800 | Buy Now |
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Future Electronics | Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.4550 / $0.5400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 75V, 0.009OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 1604 |
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$0.6825 / $1.9500 | Buy Now |
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Rochester Electronics | IRFB3607 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 15875 |
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$0.4448 / $0.5233 | Buy Now |
DISTI #
IRFB3607PBF
|
Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3607PBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 100 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
|
$0.4037 / $0.4934 | Buy Now |
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IRFB3607PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB3607PBF
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 310 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFB3607PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3607PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS3607TRRPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFB3607PBF vs IRFS3607TRRPBF |
IRFR3607TRL | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFB3607PBF vs IRFR3607TRL |
BUK7609-75A,118 | N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin | Nexperia | IRFB3607PBF vs BUK7609-75A,118 |
IRFSL3607PBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IRFB3607PBF vs IRFSL3607PBF |
BUK769R6-80E | Power Field-Effect Transistor | Nexperia | IRFB3607PBF vs BUK769R6-80E |
IRFU3607PBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 | Infineon Technologies AG | IRFB3607PBF vs IRFU3607PBF |
FDB088N08 | N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ, 800-REEL | onsemi | IRFB3607PBF vs FDB088N08 |
AUIRFSL3607 | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | International Rectifier | IRFB3607PBF vs AUIRFSL3607 |
IRFR3607PBF | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFB3607PBF vs IRFR3607PBF |
934058279118 | Power Field-Effect Transistor | Nexperia | IRFB3607PBF vs 934058279118 |