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Transistors / Power Field-Effect Transistors / IRFB4310ZPBF
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IRFB4310ZPBF by:

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRFB4310ZPBF by Infineon Technologies AG

Overview of IRFB4310ZPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRFB4310ZPBF

Part # Distributor Description Stock Price Buy
DISTI # 61M6835
Newark Mosfet, N, 100V, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:127A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0056Ohm, Rds(On) Test Voltage Vgs:20V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRFB4310ZPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1401
  • 1 $2.9200
  • 10 $2.4600
  • 25 $2.3100
  • 50 $2.1500
  • 100 $2.0000
  • 300 $1.8800
  • 500 $1.7700
$1.7700 / $2.9200 Buy Now
DISTI # IRFB4310ZPBF-ND
DigiKey MOSFET N-CH 100V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 583
In Stock
  • 1 $3.7800
  • 10 $2.4800
  • 100 $1.7412
  • 500 $1.4249
  • 1,000 $1.3230
  • 2,000 $1.3137
$1.3137 / $3.7800 Buy Now
DISTI # IRFB4310ZPBF
Avnet Americas Trans MOSFET N-CH 100V 127A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4310ZPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 102 Partner Stock
RFQ
DISTI # IRFB4310ZPBF
Avnet Americas Trans MOSFET N-CH 100V 127A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4310ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.1155
$1.1155 Buy Now
DISTI # 942-IRFB4310ZPBF
Mouser Electronics MOSFETs MOSFT 100V 127A 6mOhm 120nC Qg RoHS: Compliant 1015
  • 1 $2.7800
  • 10 $2.3400
  • 25 $2.2300
  • 100 $1.9200
  • 1,000 $1.6200
  • 2,000 $1.3600
  • 5,000 $1.3100
$1.3100 / $2.7800 Buy Now
Future Electronics Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube 1000
Tube
  • 50 $1.2200
  • 200 $1.1900
  • 750 $1.1600
  • 1,500 $1.1400
  • 3,750 $1.1000
$1.1000 / $1.2200 Buy Now
Future Electronics Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Container: Tube 37
Tube
  • 1 $1.4200
  • 40 $1.3800
  • 150 $1.3400
  • 400 $1.3100
  • 1,500 $1.2500
$1.2500 / $1.4200 Buy Now
DISTI # 82431514
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 5 Package Multiple: 1 Date Code: 2424 Americas - 20855
  • 5 $2.2939
  • 10 $2.0219
  • 25 $2.0044
  • 100 $1.6326
  • 500 $1.3859
  • 1,000 $1.3021
  • 2,000 $1.2836
$1.2836 / $2.2939 Buy Now
DISTI # 69267826
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 18 Package Multiple: 1 Date Code: 2310 Americas - 1900
  • 18 $1.8375
  • 50 $1.8250
  • 100 $1.5750
  • 1,000 $1.5625
$1.5625 / $1.8375 Buy Now
DISTI # 83716500
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 34 Package Multiple: 1 Date Code: 2401 Americas - 1000
  • 34 $2.2788
  • 50 $2.1920
  • 100 $2.1176
  • 250 $2.0534
  • 500 $1.9975
  • 1,000 $1.9486
$1.9486 / $2.2788 Buy Now
DISTI # 83645976
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2429 Americas - 209
  • 6 $2.6559
  • 10 $2.2642
  • 25 $2.2492
  • 100 $1.7423
  • 500 $1.4308
  • 1,000 $1.3300
  • 2,000 $1.3076
$1.3076 / $2.6559 Buy Now
DISTI # 67611340
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 34 Package Multiple: 1 Date Code: 2301 Americas - 39
  • 34 $2.2788
$2.2788 Buy Now
Quest Components   831
  • 1 $4.5360
  • 359 $2.4948
  • 803 $2.2680
$2.2680 / $4.5360 Buy Now
DISTI # IRFB4310ZPBF
TME Transistor: N-MOSFET, unipolar, 100V, 127A, 250W, TO220AB Min Qty: 1 29
  • 1 $3.0400
  • 10 $2.6400
  • 50 $2.3200
  • 100 $2.1800
  • 500 $1.8800
  • 1,000 $1.7300
  • 2,000 $1.6000
$1.6000 / $3.0400 Buy Now
DISTI # C1S322000488757
Chip1Stop MOSFET RoHS: Compliant 20855
  • 1 $3.5300
  • 10 $2.4400
  • 50 $2.0500
  • 100 $1.4700
  • 500 $1.3200
  • 1,000 $1.3100
  • 2,500 $1.2900
  • 5,000 $1.2700
  • 10,000 $1.2300
$1.2300 / $3.5300 Buy Now
DISTI # C1S322000844254
Chip1Stop MOSFET RoHS: Compliant Container: Tube 1900
  • 1 $1.7200
  • 10 $1.4700
  • 50 $1.4600
  • 100 $1.2600
  • 1,000 $1.2500
$1.2500 / $1.7200 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 39
  • 1 $2.3110
  • 10 $1.8950
  • 50 $1.6330
  • 100 $1.5970
  • 500 $1.5910
  • 1,000 $1.5120
$1.5120 / $2.3110 Buy Now
DISTI # SP001570588
EBV Elektronik Trans MOSFET N-CH 100V 127A 3-Pin(3+Tab) TO-220AB (Alt: SP001570588) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 67000
Buy Now
LCSC 100V 120A 6m10V75A 250W 4V150uA 1 N-Channel TO-220-3 MOSFETs ROHS 2387
  • 1 $1.3475
  • 10 $1.1496
  • 50 $1.0256
  • 100 $0.8999
  • 500 $0.8418
  • 1,000 $0.8167
$0.8167 / $1.3475 Buy Now
New Advantage Corporation Single N-Channel 100 V 6 mOhm 120 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 3450
  • 150 $1.2900
  • 3,450 $1.2100
$1.2100 / $1.2900 Buy Now

Part Details for IRFB4310ZPBF

IRFB4310ZPBF CAD Models

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IRFB4310ZPBF Part Data Attributes

Parametric Data
IRFB4310ZPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB4310ZPBF Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 560 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB4310ZPBF

This table gives cross-reference parts and alternative options found for IRFB4310ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4310ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFB4310ZGPBF Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFB4310ZPBF vs IRFB4310ZGPBF
IRFB4310ZPBF Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB4310ZPBF vs IRFB4310ZPBF
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments IRFB4310ZPBF vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRFB4310ZPBF vs IPB80N06S2LH5ATMA1
STH8NA60FI 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STMicroelectronics IRFB4310ZPBF vs STH8NA60FI
IXFH14N80 Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IRFB4310ZPBF vs IXFH14N80
IXFH7N90Q Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc IRFB4310ZPBF vs IXFH7N90Q
STW80NF55-06 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics IRFB4310ZPBF vs STW80NF55-06
STP19N06 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFB4310ZPBF vs STP19N06
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics IRFB4310ZPBF vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation IRFB4310ZPBF vs NDB705BEL
STD12N05-1 12A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 STMicroelectronics IRFB4310ZPBF vs STD12N05-1

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