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Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K1977
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Newark | Mosfet Transistor, N Channel, 96 A, 100 V, 0.008 Ohm, 20 V, 4 V Rohs Compliant: Yes |Infineon IRFB4410PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 5190 |
|
$1.3000 / $3.0200 | Buy Now |
DISTI #
IRFB4410PBF-ND
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DigiKey | MOSFET N-CH 100V 88A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
7691 In Stock |
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$1.2578 / $2.9000 | Buy Now |
DISTI #
IRFB4410PBF
|
Avnet Americas | Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4410PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$1.1350 / $1.2971 | Buy Now |
DISTI #
942-IRFB4410PBF
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Mouser Electronics | MOSFET MOSFT 100V 96A 10mOhm 120nC RoHS: Compliant | 896 |
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$1.2500 / $2.9000 | Buy Now |
DISTI #
70017255
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 8 Milliohms, ID 88A, TO-220AB, PD 200W, VF 1.3V | Infineon IRFB4410PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
|
$1.8700 | RFQ |
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Future Electronics | Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 1800Tube |
|
$0.5900 / $0.7000 | Buy Now |
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Future Electronics | Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 300Tube |
|
$0.5550 / $0.6600 | Buy Now |
DISTI #
75723935
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Verical | Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 14 Package Multiple: 1 Date Code: 2334 | Americas - 5980 |
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$1.4625 / $2.3000 | Buy Now |
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Rochester Electronics | IRFB4410 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 27 |
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$1.2100 / $1.4200 | Buy Now |
DISTI #
IRFB4410PBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 96A, 250W, TO220AB Min Qty: 1 | 0 |
|
$1.0300 / $1.4000 | RFQ |
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IRFB4410PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4410PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 220 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 380 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFB4410PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4410PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRFB4410 | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRFB4410PBF vs AUIRFB4410 |
IRFB4410 | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRFB4410PBF vs IRFB4410 |
AUIRFB4410 | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | IRFB4410PBF vs AUIRFB4410 |
IRFB4410PBF | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFB4410PBF vs IRFB4410PBF |