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Transistors / Power Field-Effect Transistors / IRFB4620PBF
Datasheets
IRFB4620PBF by:

Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRFB4620PBF by Infineon Technologies AG

Overview of IRFB4620PBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFB4620PBF

Part # Distributor Description Stock Price Buy
DISTI # 45P3444
Newark Mosfet, N-Ch, 200V, 25A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:25A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IRFB4620PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1862
  • 1 $2.6300
  • 10 $1.6600
  • 100 $1.4800
  • 500 $1.3300
  • 1,000 $1.2400
$1.2400 / $2.6300 Buy Now
DISTI # IRFB4620PBF-ND
DigiKey MOSFET N-CH 200V 25A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 689
In Stock
  • 1 $2.5700
  • 50 $2.0662
  • 100 $1.7001
  • 500 $1.4385
  • 1,000 $1.2206
  • 2,000 $1.1595
  • 5,000 $1.1159
$1.1159 / $2.5700 Buy Now
DISTI # IRFB4620PBF
Avnet Americas Trans MOSFET N-CH 200V 25A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4620PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.1868
  • 1,200 $1.1509
  • 2,200 $1.1149
  • 5,000 $1.0790
  • 10,000 $1.0430
  • 50,000 $1.0070
  • 100,000 $0.9711
$0.9711 / $1.1868 Buy Now
DISTI # 45P3444
Avnet Americas Trans MOSFET N-CH 200V 25A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 45P3444) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 413 Partner Stock
  • 1 $2.6400
  • 10 $1.7800
  • 100 $1.5400
  • 500 $1.3900
  • 1,000 $1.2500
$1.2500 / $2.6400 Buy Now
DISTI # 942-IRFB4620PBF
Mouser Electronics MOSFET MOSFT 200V 25A 72.5mOhm 25nC Qg RoHS: Compliant 5147
  • 1 $2.0100
  • 10 $1.5500
  • 100 $1.3600
  • 500 $1.1700
  • 1,000 $1.1100
$1.1100 / $2.0100 Buy Now
DISTI # 70017921
RS IRFB4620PBF N-channel MOSFET Transistor, 25 A, 200 V, 3-Pin TO-220AB | Infineon IRFB4620PBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $1.9700
  • 20 $1.8700
  • 100 $1.7700
  • 200 $1.6700
$1.6700 / $1.9700 RFQ
Future Electronics Single N-Channel 200 V 72.5 mOhm 38 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0900
  • 200 $1.0400
  • 750 $0.9850
  • 1,250 $0.9700
  • 2,500 $0.9150
$0.9150 / $1.0900 Buy Now
Future Electronics Single N-Channel 200 V 72.5 mOhm 38 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0900
  • 200 $1.0400
  • 750 $0.9850
  • 1,250 $0.9700
  • 2,500 $0.9150
$0.9150 / $1.0900 Buy Now
Rochester Electronics IRFB4620 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 1093
  • 1 $1.2600
  • 25 $1.2300
  • 100 $1.1800
  • 500 $1.1300
  • 1,000 $1.0700
$1.0700 / $1.2600 Buy Now
DISTI # IRFB4620PBF
TME Transistor: N-MOSFET, unipolar, 200V, 25A, 144W, TO220AB Min Qty: 1 471
  • 1 $2.6700
  • 3 $2.4400
  • 10 $1.9400
  • 50 $1.7400
$1.7400 / $2.6700 Buy Now
Ameya Holding Limited   Min Qty: 2 926
  • 2 $2.7748
  • 10 $2.6916
  • 20 $2.5569
  • 100 $2.3786
  • 500 $2.1647
$2.1647 / $2.7748 Buy Now
DISTI # SP001563998
EBV Elektronik Trans MOSFET N-CH 200V 25A 3-Pin(3+Tab) TO-220AB (Alt: SP001563998) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFB4620PBF

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IRFB4620PBF Part Data Attributes

Parametric Data
IRFB4620PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB4620PBF Infineon Technologies AG Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 113 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.0725 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 144 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB4620PBF

This table gives cross-reference parts and alternative options found for IRFB4620PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4620PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFB4020PBF Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRFB4620PBF vs IRFB4020PBF
IRFB4020PBF Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB4620PBF vs IRFB4020PBF
IRFB4620PBF Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFB4620PBF vs IRFB4620PBF
IRFB17N20D Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFB4620PBF vs IRFB17N20D
IRFB17N20DPBF Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB4620PBF vs IRFB17N20DPBF

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