Datasheets
IRFBF20PBF by:

Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRFBF20PBF by Vishay Intertechnologies

Overview of IRFBF20PBF by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IRFBF20PBF

Part # Distributor Description Stock Price Buy
DISTI # 38K2469
Newark Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W, Channel Type:N Channel, Drain Source Voltage Vds:900V, Continuous Drain Current Id:1.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFBF20PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 251
  • 1 $2.0600
  • 10 $1.6200
  • 25 $1.5700
  • 50 $1.5100
  • 100 $1.4600
  • 500 $1.3000
$1.3000 / $2.0600 Buy Now
DISTI # IRFBF20PBF
Avnet Americas Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: IRFBF20PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1938
  • 2,000 $1.1555
  • 4,000 $1.1172
  • 6,000 $1.0790
  • 8,000 $1.0372
  • 10,000 $0.9885
  • 100,000 $0.9397
$0.9397 / $1.1938 Buy Now
DISTI # 38K2469
Avnet Americas Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 38K2469) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 5 Days Container: Bulk 0
  • 1 $2.3200
  • 10 $2.0400
  • 25 $1.9100
  • 50 $1.7800
  • 100 $1.6500
$1.6500 / $2.3200 Buy Now
DISTI # 844-IRFBF20PBF
Mouser Electronics MOSFET 900V N-CH HEXFET RoHS: Compliant 161
  • 1 $2.0200
  • 10 $1.6600
  • 100 $1.4100
  • 250 $1.3600
  • 500 $1.1900
  • 1,000 $1.1300
$1.1300 / $2.0200 Buy Now
DISTI # V99:2348_09218690
Arrow Electronics Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2241 Americas - 14
  • 1 $1.3367
  • 10 $1.1666
  • 25 $1.1549
  • 50 $1.1434
  • 100 $1.0712
  • 500 $0.9348
$0.9348 / $1.3367 Buy Now
Future Electronics Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.9900
  • 2,000 $0.9650
  • 3,000 $0.9550
  • 4,000 $0.9450
  • 5,000 $0.9150
$0.9150 / $0.9900 Buy Now
Future Electronics Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.9900
  • 2,000 $0.9650
  • 3,000 $0.9550
  • 4,000 $0.9450
  • 5,000 $0.9150
$0.9150 / $0.9900 Buy Now
DISTI # 64954863
Verical Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 2241 Americas - 14
  • 7 $1.3367
  • 10 $1.1666
  • 25 $1.1549
  • 50 $1.1434
  • 100 $1.0712
  • 500 $0.9348
$0.9348 / $1.3367 Buy Now
DISTI # IRFBF20PBF
TTI MOSFET 900V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $1.0000
  • 2,000 $0.9800
  • 3,000 $0.9600
  • 5,000 $0.9400
$0.9400 / $1.0000 Buy Now
DISTI # IRFBF20PBF
TME Transistor: N-MOSFET, unipolar, 900V, 1.1A, Idm: 6.8A, 54W, TO220AB Min Qty: 1 0
  • 1 $0.9500
  • 3 $0.8500
  • 10 $0.7600
  • 50 $0.6800
  • 250 $0.6400
$0.6400 / $0.9500 RFQ
DISTI # IRFBF20PBF
EBV Elektronik Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-220AB (Alt: IRFBF20PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 250
Buy Now
New Advantage Corporation MOSFET N-CHANNEL 900V RoHS: Compliant Min Qty: 1 Package Multiple: 50 500
  • 50 $0.8090
$0.8090 Buy Now

Part Details for IRFBF20PBF

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IRFBF20PBF Part Data Attributes

IRFBF20PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFBF20PBF Vishay Intertechnologies Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks, 5 Days
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 1.7 A
Drain-source On Resistance-Max 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 54 W
Pulsed Drain Current-Max (IDM) 6.8 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBF20PBF

This table gives cross-reference parts and alternative options found for IRFBF20PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBF20PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBF20 Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Vishay Intertechnologies IRFBF20PBF vs IRFBF20
IRFBF20 Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBF20PBF vs IRFBF20
IRFBF20PBF Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBF20PBF vs IRFBF20PBF
Part Number Description Manufacturer Compare
IRFBF20PBF Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBF20PBF vs IRFBF20PBF
IRFBF20PBF Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRFBF20PBF vs IRFBF20PBF
IRFBF20 Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Vishay Intertechnologies IRFBF20PBF vs IRFBF20
IRFBF20 Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBF20PBF vs IRFBF20

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