Datasheets
IRFD123PBF by:

Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFD123PBF by Vishay Intertechnologies

Overview of IRFD123PBF by Vishay Intertechnologies

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Price & Stock for IRFD123PBF

Part # Distributor Description Stock Price Buy
DISTI # 31K1939
Newark N Channel Mosfet, 100V, 1.3A, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:- Rohs Compliant: Yes |Vishay IRFD123PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 89
  • 1 $0.9400
  • 10 $0.7670
  • 25 $0.7100
  • 50 $0.6540
  • 100 $0.5970
  • 500 $0.5120
$0.5120 / $0.9400 Buy Now
DISTI # 31K1939
Avnet Americas MOSFET N-CHANNEL 100V - Bulk (Alt: 31K1939) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Bulk 89 Partner Stock
  • 1 $0.5120
  • 10 $1.1100
  • 25 $0.9620
  • 50 $0.8120
  • 100 $0.6610
$0.5120 / $1.1100 Buy Now
DISTI # IRFD123PBF
Avnet Americas MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRFD123PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.4908
$0.4908 Buy Now
DISTI # IRFD123PBF
TTI MOSFETs HVMDIP 100V 1.3A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 2500
In Stock
  • 50 $0.7700
  • 100 $0.6000
  • 500 $0.5100
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now
DISTI # IRFD123PBF
TME Transistor: N-MOSFET, unipolar, 100V, 1.3A, Idm: 10A, 1.3W, HVMDIP Min Qty: 1 0
  • 1 $0.8440
  • 5 $0.5910
  • 25 $0.5220
  • 100 $0.4690
  • 500 $0.4380
  • 2,500 $0.4230
$0.4230 / $0.8440 RFQ
DISTI # IRFD123PBF
EBV Elektronik Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP (Alt: IRFD123PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFD123PBF

IRFD123PBF CAD Models

IRFD123PBF Part Data Attributes

IRFD123PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD123PBF Vishay Intertechnologies Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks, 1 Day
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.3 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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