Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Distributor Offerings: (
6 listings
)
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Number of FFF Equivalents: (
0 replacements
)
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CAD Models: (
Available
)
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Number of Functional Equivalents: (
0 options
)
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Part Data Attributes (
Available
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Reference Designs: (
Not Available
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Part # |
Manufacturer |
Description |
Stock |
Price |
Buy |
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Newark
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N Channel Mosfet, 100V, 1.3A, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:- Rohs Compliant: Yes |Vishay IRFD123PBF
RoHS:
Compliant
Min Qty:
1
Package Multiple:
1
Date Code:
1
Container:
Bulk
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89
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1
$0.9400
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10
$0.7670
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25
$0.7100
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50
$0.6540
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100
$0.5970
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500
$0.5120
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$0.5120 / $0.9400
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Buy Now
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Avnet Americas
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MOSFET N-CHANNEL 100V - Bulk (Alt: 31K1939)
RoHS:
Compliant
Min Qty:
1
Package Multiple:
1
Lead time:
18 Weeks, 1 Days
Container:
Bulk
|
89 Partner Stock
|
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1
$0.5120
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10
$1.1100
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25
$0.9620
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50
$0.8120
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100
$0.6610
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$0.5120 / $1.1100
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Buy Now
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Avnet Americas
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MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRFD123PBF)
RoHS:
Compliant
Min Qty:
2500
Package Multiple:
2500
Container:
Reel
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0
|
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$0.4908
|
Buy Now
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TTI
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MOSFETs HVMDIP 100V 1.3A N-CH MOSFET
RoHS:
Compliant
pbFree:
Pb-Free
Min Qty:
50
Package Multiple:
50
Container:
Tube
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Americas - 2500 In Stock
|
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50
$0.7700
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100
$0.6000
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500
$0.5100
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1,000
$0.5000
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$0.5000 / $0.7700
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Buy Now
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TME
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Transistor: N-MOSFET, unipolar, 100V, 1.3A, Idm: 10A, 1.3W, HVMDIP
Min Qty:
1
|
0
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1
$0.8440
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5
$0.5910
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25
$0.5220
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100
$0.4690
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500
$0.4380
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2,500
$0.4230
|
$0.4230 / $0.8440
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RFQ
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EBV Elektronik
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Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP (Alt: IRFD123PBF)
RoHS:
Compliant
Min Qty:
100
Package Multiple:
100
Lead time:
13 Weeks, 0 Days
|
EBV - 0
|
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Buy Now
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Part Symbol
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Footprint
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3D Model
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VISHAY INTERTECHNOLOGY INC
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Avalanche Energy Rating (Eas)
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SINGLE WITH BUILT-IN DIODE
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Drain-source On Resistance-Max
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METAL-OXIDE SEMICONDUCTOR
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Operating Temperature-Max
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Peak Reflow Temperature (Cel)
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Time@Peak Reflow Temperature-Max (s)
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Transistor Element Material
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Want to compare parts?
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Vishay Intertechnologies
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
VS
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