| Infineon Technologies AG |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
$4.3820 / $14.1400
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| New Jersey Semiconductor Products, Inc. |
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$15.7440 / $19.2000
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| New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39 |
$17.6000 / $20.8000
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| International Rectifier |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
$11.3625
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.5A I(D),TO-205AF |
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| General Electric Solid State |
Transistor |
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| Intersil Corporation |
3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Motorola Mobility LLC |
3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| Harris Semiconductor |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 |
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