Part Details for IRFF220R by Harris Semiconductor
Overview of IRFF220R by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFF220R
IRFF220R CAD Models
IRFF220R Part Data Attributes
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IRFF220R
Harris Semiconductor
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Datasheet
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IRFF220R
Harris Semiconductor
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 160 ns | |
| Turn-on Time-Max (ton) | 100 ns |
Alternate Parts for IRFF220R
This table gives cross-reference parts and alternative options found for IRFF220R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF220R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFF223 | 3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Rochester Electronics LLC | IRFF220R vs IRFF223 |
| IRFF223 | Power Field-Effect Transistor, 3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | IRFF220R vs IRFF223 |
| IRFF220PBF | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRFF220R vs IRFF220PBF |
| IRFF223R | 3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF220R vs IRFF223R |
| IRFF220-JQR-B | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | IRFF220R vs IRFF220-JQR-B |
| 2N6790R1 | 3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF220R vs 2N6790R1 |
| JAN2N6790 | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Defense Logistics Agency | IRFF220R vs JAN2N6790 |
| IRFF220 | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | IRFF220R vs IRFF220 |
| IRFF220 | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | Vishay Siliconix | IRFF220R vs IRFF220 |
| IRFF222R | Power Field-Effect Transistor, 3A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | IRFF220R vs IRFF222R |