Datasheets
IRFF221 by:

Power Field-Effect Transistor, 3.5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for IRFF221 by International Rectifier

Overview of IRFF221 by International Rectifier

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Part Details for IRFF221

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IRFF221 Part Data Attributes

IRFF221 International Rectifier
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IRFF221 International Rectifier Power Field-Effect Transistor, 3.5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRFF221

This table gives cross-reference parts and alternative options found for IRFF221. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF221, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFF221 3.5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF221 vs IRFF221
IRFF221 Power Field-Effect Transistor, 3.5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF221 vs IRFF221
Part Number Description Manufacturer Compare
IRFF223 3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF221 vs IRFF223
IRFF223 Power Field-Effect Transistor, 3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF221 vs IRFF223
IRFF220PBF Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier IRFF221 vs IRFF220PBF
IRFF223R 3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF221 vs IRFF223R
IRFF220-JQR-B Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors IRFF221 vs IRFF220-JQR-B
2N6790R1 3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF221 vs 2N6790R1
JAN2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF221 vs JAN2N6790
IRFF220 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors IRFF221 vs IRFF220
IRFF220 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 Vishay Siliconix IRFF221 vs IRFF220
IRFF222R Power Field-Effect Transistor, 3A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF221 vs IRFF222R

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