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IRFF330

Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

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Distributors with Stock

Total Inventory

230

Part Number Description Manufacturer Compare
JAN2N6800 Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF330 vs JAN2N6800
2N6800 Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG IRFF330 vs 2N6800
JANTX2N6800 Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF330 vs JANTX2N6800
IRFF330R1 Transistors 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF330 vs IRFF330R1
JANTXV2N6800 Transistors TRANSISTOR 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, FET General Purpose Power Defense Supply Center Columbus IRFF330 vs JANTXV2N6800
IRFF330PBF Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG IRFF330 vs IRFF330PBF
IRFF330-JQR-BR1 Transistors 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF330 vs IRFF330-JQR-BR1
2N6800R1 Transistors 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF330 vs 2N6800R1
Part Number Description Manufacturer Compare
JANTXV2N6800 Transistors TRANSISTOR 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, FET General Purpose Power Defense Supply Center Columbus IRFF330 vs JANTXV2N6800
JANTX2N6800 Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF330 vs JANTX2N6800
IRFF333 Transistors 3A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF330 vs IRFF333
IRFF330-JQR-BR1 Transistors 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF330 vs IRFF330-JQR-BR1
2N6800 Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG IRFF330 vs 2N6800
IRFF331 Transistors 3.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF330 vs IRFF331
2N6800R1 Transistors 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF330 vs 2N6800R1
IRFF330R1 Transistors 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF330 vs IRFF330R1
IRFF330PBF Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG IRFF330 vs IRFF330PBF
JAN2N6800 Transistors Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF330 vs JAN2N6800

Global Popularity

Popularity in Transistors

Popularity in Power Field-Effect Transistors

Popularity by Region

Very High

Medium

Good

Low

  • 1. Australia
    100
  • 2. China
    100
  • 3. Sweden
    96
  • 4. United States of America
    96
  • 5. Italy
    93
  • 6. Malaysia
    93
  • 7. Argentina
    92
  • 8. Algeria
    92
  • 9. Peru
    92
  • 10. Mexico
    92

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