IRFF333
Description: Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Overview of IRFF333 by Harris Semiconductor

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Part Data Attributes for IRFF333 by Harris Semiconductor

IRFF333
Harris Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
350 V
Drain Current-Max (ID)
3 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
12 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
90 ns
Turn-on Time-Max (ton)
65 ns
Want to compare parts?
  1. IRFF333
    Harris Semiconductor
    Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
    VS

Alternate Parts for IRFF333

This table gives cross-reference parts and alternative options found for IRFF333. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF333, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFF333 Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 Vishay Siliconix IRFF333 vs IRFF333
IRFF333 3A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF333 vs IRFF333
Part Number Description Manufacturer Compare
IRFF330R Power Field-Effect Transistor, 3.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF333 vs IRFF330R
IRFF332 Power Field-Effect Transistor, 3A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF333 vs IRFF332
IRFF333 3A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF333 vs IRFF333
IRFF330-JQR-B Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRFF333 vs IRFF330-JQR-B
IRFF330-JQR-BR1 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRFF333 vs IRFF330-JQR-BR1
JANTXV2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF333 vs JANTXV2N6800
2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF333 vs 2N6800
JANTXV2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN Omnirel Corp IRFF333 vs JANTXV2N6800
JANTXV2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation IRFF333 vs JANTXV2N6800
JANTXV2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF333 vs JANTXV2N6800

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