Datasheets
IRFF432 by:

2.25A, 500V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

Part Details for IRFF432 by Rochester Electronics LLC

Overview of IRFF432 by Rochester Electronics LLC

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Part Details for IRFF432

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IRFF432 Part Data Attributes:

IRFF432 Rochester Electronics LLC
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IRFF432 Rochester Electronics LLC 2.25A, 500V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 2.25 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 9 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFF432

This table gives cross-reference parts and alternative options found for IRFF432. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF432, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFF432 Power Field-Effect Transistor, 2.25A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF432 vs IRFF432
IRFF432 Power Field-Effect Transistor, 2.2A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF432 vs IRFF432
Part Number Description Manufacturer Compare
IRFF432R Power Field-Effect Transistor, 2.25A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF432 vs IRFF432R
UFNF432 Power Field-Effect Transistor, 2.25A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) IRFF432 vs UFNF432
IRFF432 Power Field-Effect Transistor, 2.2A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF432 vs IRFF432
IRFF432 Power Field-Effect Transistor, 2.25A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF432 vs IRFF432

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