| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Infineon Technologies AG | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | $2.5153 / $14.1400 |
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| New Jersey Semiconductor Products, Inc. | $15.7440 / $19.2000 |
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| New Jersey Semiconductor Products Inc | Trans MOSFET P-CH 100V 4A 3-Pin TO-39 | $16.0000 / $20.8000 |
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| International Rectifier | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | $6.0000 / $9.2300 |
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| TT Electronics Power and Hybrid / Semelab Limited | 4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| TT Electronics Resistors | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| Thomson Consumer Electronics | Transistor |
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| Intersil Corporation | 4A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Harris Semiconductor | Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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