There are no models available for this part yet.
Overview of IRFF9220 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFF9220 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Future Electronics | Single P-Channel 200 V 20 W 2.5 A Through Hole Hexfet Power Mosfet - TO-39 RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 Container: Bulk | 0Bulk |
|
$13.4700 / $14.1400 | Buy Now |
CAD Models for IRFF9220 by Infineon Technologies AG
Part Data Attributes for IRFF9220 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
TO-39, 3 PIN
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
180 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
200 V
|
Drain Current-Max (ID)
|
2.5 A
|
Drain-source On Resistance-Max
|
1.725 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-205AF
|
JESD-30 Code
|
O-MBCY-W3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
METAL
|
Package Shape
|
ROUND
|
Package Style
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
20 W
|
Pulsed Drain Current-Max (IDM)
|
10 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
WIRE
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFF9220
This table gives cross-reference parts and alternative options found for IRFF9220. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF9220, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFF9220-JQR-BR1 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9220 vs IRFF9220-JQR-BR1 |
IRFF9220 | 2.5A, 200V, 1.725ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Rochester Electronics LLC | IRFF9220 vs IRFF9220 |
IRFF9220-JQR-BR1 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9220 vs IRFF9220-JQR-BR1 |
IRFF9220R1 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9220 vs IRFF9220R1 |
IRFF9220 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF9220 vs IRFF9220 |
IRFF9220 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9220 vs IRFF9220 |
JANTXV2N6847 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | Microsemi Corporation | IRFF9220 vs JANTXV2N6847 |
IRFF9220-JQR-B | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9220 vs IRFF9220-JQR-B |
IRFF9220R1 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9220 vs IRFF9220R1 |
JANTX2N6847 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | IRFF9220 vs JANTX2N6847 |
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