There are no models available for this part yet.
Overview of IRFF9230R1 by TT Electronics Power and Hybrid / Semelab Limited
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRFF9230R1 by TT Electronics Power and Hybrid / Semelab Limited
Part Data Attributes for IRFF9230R1 by TT Electronics Power and Hybrid / Semelab Limited
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|---|---|
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Pbfree Code
|
Yes
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|
Rohs Code
|
Yes
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|
Part Life Cycle Code
|
Active
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Ihs Manufacturer
|
SEMELAB LTD
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Part Package Code
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BCY
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Package Description
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CYLINDRICAL, O-MBCY-W3
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Pin Count
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2
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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200 V
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Drain Current-Max (ID)
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4 A
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Drain-source On Resistance-Max
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0.8 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-205AF
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JESD-30 Code
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O-MBCY-W3
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JESD-609 Code
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e1
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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METAL
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Package Shape
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ROUND
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Package Style
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CYLINDRICAL
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Polarity/Channel Type
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P-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
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TIN SILVER COPPER
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Terminal Form
|
WIRE
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Terminal Position
|
BOTTOM
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Transistor Element Material
|
SILICON
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Alternate Parts for IRFF9230R1
This table gives cross-reference parts and alternative options found for IRFF9230R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF9230R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Temic Semiconductors | IRFF9230R1 vs 2N6851 |
| 2N6851TX | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF9230R1 vs 2N6851TX |
| 2N6851 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9230R1 vs 2N6851 |
| IRFF9230 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF9230R1 vs IRFF9230 |
| IRFF9230-JQR-BR1 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9230R1 vs IRFF9230-JQR-BR1 |
| 2N6851TXV | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Fairchild Semiconductor Corporation | IRFF9230R1 vs 2N6851TXV |
| IRFF9230PBF | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRFF9230R1 vs IRFF9230PBF |
| 2N6851 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF9230R1 vs 2N6851 |
| 2N6851R1 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9230R1 vs 2N6851R1 |
| 2N6851TX | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | IRFF9230R1 vs 2N6851TX |