Part Details for IRFH5020TRPBF by Infineon Technologies AG
Overview of IRFH5020TRPBF by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFH5020TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4690
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Newark | Mosfet, N-Ch, 200V, 34A, Pqfn-8, Transistor Polarity:N Channel, Continuous Drain Current Id:34A, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.047Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Dissipationrohs Compliant: Yes |Infineon IRFH5020TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2115 |
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$1.2400 / $2.5000 | Buy Now |
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DISTI #
IRFH5020TRPBFCT-ND
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DigiKey | MOSFET N-CH 200V 5.1A 8PQFN Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7256 In Stock |
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$0.9335 / $2.9400 | Buy Now |
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DISTI #
IRFH5020TRPBF
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Avnet Americas | Trans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R - Tape and Reel (Alt: IRFH5020TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.7079 | Buy Now |
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DISTI #
942-IRFH5020TRPBF
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Mouser Electronics | MOSFETs 200V 1 N-CH HEXFET 55mOhms 11nC RoHS: Compliant | 7653 |
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$0.9330 / $2.4400 | Buy Now |
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Future Electronics | Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 4000Reel |
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$0.9150 | Buy Now |
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Future Electronics | Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.9150 | Buy Now |
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Bristol Electronics | 333 |
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RFQ | ||
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DISTI #
IRFH5020TRPBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 5.1A, 3.6W, PQFN5X6 Min Qty: 4000 | 0 |
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$1.1500 | RFQ |
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DISTI #
C1S322002832493
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Chip1Stop | MOSFET RoHS: Compliant | 16000 |
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$0.9286 | Buy Now |
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DISTI #
C1S322001062404
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 1849 |
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$0.9010 / $1.9900 | Buy Now |
Part Details for IRFH5020TRPBF
IRFH5020TRPBF CAD Models
IRFH5020TRPBF Part Data Attributes
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IRFH5020TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH5020TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.1A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 320 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 8.3 W | |
| Pulsed Drain Current-Max (IDM) | 63 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFH5020TRPBF
This table gives cross-reference parts and alternative options found for IRFH5020TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFH5020TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFH5020TR2PBF | Power Field-Effect Transistor, 5.1A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | IRFH5020TRPBF vs IRFH5020TR2PBF |