Part Details for IRFH5110TRPBF by Infineon Technologies AG
Results Overview of IRFH5110TRPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFH5110TRPBF Information
IRFH5110TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFH5110TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2580005RL
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Farnell | MOSFET, N-CH, 100V, 63A, PQFN-8 COO: MY RoHS: Compliant Min Qty: 10 Lead time: 27 Weeks, 1 Days Container: Reel | 14 |
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$1.4871 | Buy Now |
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DISTI #
2580005
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Farnell | MOSFET, N-CH, 100V, 63A, PQFN-8 COO: MY RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 14 |
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$1.4871 / $1.9608 | Buy Now |
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DISTI #
70019272
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RS | MOSFET 100V, GEN 10.7, 11.68 MOHM MAX, 56.2 NC QG Min Qty: 4000 Package Multiple: 1 Container: Bulk | 0 |
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$1.8450 / $2.1700 | RFQ |
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Bristol Electronics | Min Qty: 2 | 466 |
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$1.3776 / $3.3600 | Buy Now |
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DISTI #
IRFH5110TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 11A, 3.6W, PQFN5X6 Min Qty: 4000 | 0 |
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$0.9600 | RFQ |
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DISTI #
IRFH5110TRPBF
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: No Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 539 |
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$0.4960 / $2.1200 | Buy Now |
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Chip Stock | SingleN-Channel100V12.4mOhm48nCHEXFET®PowerMosfet-PQFN5x6mm | 77500 |
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RFQ | |
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LCSC | 100V 63A 3.6W PQFN-8(5x6) Single FETs MOSFETs RoHS | 16 |
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$1.0714 / $1.6667 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 11A 8-PQFN | 65000 |
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$0.7937 / $1.1905 | Buy Now |
Part Details for IRFH5110TRPBF
IRFH5110TRPBF CAD Models
IRFH5110TRPBF Part Data Attributes
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IRFH5110TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH5110TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Avalanche Energy Rating (Eas) | 93 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0124 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 121 Pf | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 114 W | |
| Pulsed Drain Current-Max (IDM) | 252 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | No Lead | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRFH5110TRPBF
This table gives cross-reference parts and alternative options found for IRFH5110TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFH5110TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFH5110TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | IRFH5110TRPBF vs IRFH5110TRPBF |
IRFH5110TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFH5110TRPBF is -55°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to ensure that the device is operated within its specified temperature range.
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The recommended PCB layout for the IRFH5110TRPBF involves using a thermal pad and thermal vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a solid copper plane.
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To calculate the power dissipation of the IRFH5110TRPBF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance of the package. You can use the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
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The IRFH5110TRPBF has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling and storage procedures to prevent damage. It's also recommended to use ESD protection devices, such as TVS diodes, in the application circuit.